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  DFM&TCAD培訓課程
   班級規(guī)模及環(huán)境--熱線:4008699035 手機:15921673576( 微信同號)
       每期人數(shù)限3到5人。
   上課時間和地點
上課地點:【上�!浚和瑵髮W(滬西)/新城金郡商務(wù)樓(11號線白銀路站) 【深圳分部】:電影大廈(地鐵一號線大劇院站)/深圳大學成教院 【北京分部】:北京中山學院/福鑫大樓 【南京分部】:金港大廈(和燕路) 【武漢分部】:佳源大廈(高新二路) 【成都分部】:領(lǐng)館區(qū)1號(中和大道) 【沈陽分部】:沈陽理工大學/六宅臻品 【鄭州分部】:鄭州大學/錦華大廈 【石家莊分部】:河北科技大學/瑞景大廈 【廣州分部】:廣糧大廈 【西安分部】:協(xié)同大廈
最近開課時間(周末班/連續(xù)班/晚班)
DFM&TCAD培訓課程:2020年3月16日
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  DFM&TCAD培訓課程
培訓方式以講課和實驗穿插進行

課程描述:

Overview
SENTAURUS WORKBENCH: The class covers the basics of this framework tool that allows organization of parameterized TCAD simulations in a single project with many possible splits, or branches.

SENTAURUS PROCESS: Users will learn the specifics of this process simulation tool, in terms of syntax and introduction of various models to simulate fabrication process flows.

SENTAURUS STRUCTURE EDITOR: The class will show you how to create 2D and 3D device structures, import structures from a prior process simulation step, make boundary simplifications and properly mesh structures for any subsequent device simulations.

SENTAURUS DEVICE: The class covers the basics how to simulate the electrical characteristics of devices created with SENTAURUS PROCESS and/or SENTAURUS STRUCTURE EDITOR.

SENTAURUS VISUAL & INSPECT: Users will be taught how to visualize the structures and results generated from the process and device simulations, using these tools.

Objectives
At the end of this workshop the student should be able to:
  • Run parameterized process and device simulations
  • Visualize simulated doping profiles, structure boundaries and materials, I-V curves and internal device characteristics such as carrier densities, current densities, and electric fields.
  • Successfully combine mask layouts and process flows to perform simulations of fabrication processes involving single or multiple semiconductors, insulators and metals.
  • Select proper models for the simulation of fabrication processes and electrical behavior of devices
  • Properly mesh structures for adequate simulations
  • Perform AC analyses of RF parameters

Course Outline

Unit 1
Tool Overview
  • What is TCAD?
  • TCAD Tool Overview
SENTAURUS WORKBENCH
  • Getting Started
  • Running a Project
  • Creating a New Project
  • Building Multiple Experiments
  • Miscellaneous Features
SWB HANDS-ON ? FULL NMOS FLOW SIMULATION
  • Process flow
  • Re-meshing
  • Device simulation
  • Parameter extraction
Process simulation I - SENTAURUS PROCESS
  • Getting Started
  • 1D Process Simulation
  • 2D Process Simulation
  • Interface with ICWB
Unit 2
Process simulation II - SENTAURUS PROCESS
  • Changing Parameters and Models
  • Working with a Custom Calibration File
  • Working with SENTAURUS PROCESS Advanced Calibration
Process simulation III - SENTAURUS PROCESS
  • SProcess under SWB
  • Meshing with MGOALS
  • Other topics/Q&A
Structure editing, Meshing I - SENTAURUS STRUCTURE EDITOR
  • Getting Started
  • Generating 2D Boundaries
  • Generating Doping Profiles
  • Generating Meshes
  • Scripting and Parameterization
Structure editing, Meshing II - SENTAURUS STRUCTURE EDITOR
  • Three-Dimensional Structures
  • Process Emulation Mode
Unit 3
Device simulation I - SENTAURUS DEVICE
  • SENTAURUS DEVICE Basics
  • Quasistationary and Transient simulations
  • Parameter file
Device simulation II - SENTAURUS DEVICE
  • Carrier Transport Models
  • Mixed-mode SENTAURUS DEVICE
  • AC analysis
Device simulation III - SENTAURUS DEVICE
  • Advanced Examples
  • Solving convergence problems in SENTAURUS DEVICE
  • Q&A
Visualization tools - INSPECT & SENTAURUS VISUAL
  • Visualization of X-Y plots and post processing of results
  • Visualization of 2D and 3D structures along with simulation results
  • Interactive mode
  • Scripting - parameter extraction

 

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